Non-volatile semiconductor storage device

ABSTRACT

According to one embodiment, there is provided a non-volatile semiconductor storage device including a non-volatile memory, a monitoring section, a determining section, and a notification processing section. The non-volatile memory includes a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines. The monitoring section monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines. The determining section determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section. The notification processing section notifies a life of the non-volatile memory in accordance with a determining result by the determining section.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 16/354,972, filedMar. 15, 2019, which is a continuation and claims the benefit ofpriority under 35 U.S.C. § 120 from U.S. application Ser. No.15/918,606, filed Mar. 12, 2018, which is a continuation of and claimsthe benefit of priority under 35 U.S.C. § 120 from U.S. application Ser.No. 15/581,904 (now U.S. Pat. No. 9,953,716), filed Apr. 28, 2017, whichis a continuation of and claims the benefit of priority under 35 U.S.C.§ 120 from U.S. application Ser. No. 15/257,773 (now U.S. Pat. No.9,666,299), filed Sep. 6, 2016, which is a continuation of and claimsthe benefit of priority under 35 U.S.C. § 120 from U.S. application Ser.No. 14/331,893 (now U.S. Pat. No. 9,466,370), filed Jul. 15, 2014, andis a continuation of and claims the benefit of priority under 35 U.S.C.§ 120 from U.S. Ser. No. 13/531,791 (now U.S. Pat. No. 8,804,435), filedJun. 25, 2012, and claims the benefit of priority under 35 U.S.C. § 119from Japanese Patent Application No. 2011-269942 filed Dec. 9, 2011; theentire contents of each of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a non-volatilesemiconductor storage device.

BACKGROUND

In a non-volatile semiconductor storage device, in performing a readoperation from a non-volatile memory, a voltage value to be read frommemory cells changes due to number of writing/erasure, a data retainingperiod, and a surrounding temperature. If necessary, a correction by anECC (Error Check and Correction) is performed. However, conventionally,such changes in the voltage value and a degree of correction by the ECCare unknown to a user, and due to this, the use keeps using thenon-volatile memory despite a nearing end of the lifetime thereof, andthis may in cases cause an abrupt loss of data that had been stored inthe non-volatile memory.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a hardware configuration of a non-volatilesemiconductor storage device according to a first embodiment;

FIG. 2A and FIG. 2B are diagrams showing a circuit configuration and anoperation of a non-volatile memory according to the first embodiment;

FIG. 3 is a diagram showing a configuration of a drive control circuitaccording to the first embodiment;

FIG. 4 is a diagram showing a functional configuration of thenon-volatile memory according to the first embodiment;

FIG. 5 is a diagram showing a functional configuration of thenon-volatile semiconductor storage device according to the firstembodiment;

FIG. 6 is a flowchart showing an operation of the non-volatilesemiconductor storage device according to the first embodiment;

FIG. 7 is a diagram showing a threshold distribution of a plurality ofmemory cells according to the first embodiment;

FIG. 8 is a diagram showing the threshold distribution of the pluralityof memory cells according to the first embodiment;

FIG. 9 is a diagram showing contents of notification by a notificationprocessing section according to the first embodiment;

FIG. 10 is a diagram showing a functional configuration of anon-volatile semiconductor storage device according to a secondembodiment;

FIG. 11 is a flowchart showing an operation of the non-volatilesemiconductor storage device according to the second embodiment;

FIG. 12 is a diagram showing a threshold distribution of a plurality ofmemory cells according to the second embodiment;

FIG. 13 is a diagram showing the threshold distribution of the pluralityof memory cells according to the second embodiment;

FIG. 14 is a diagram showing contents of notification by a notificationprocessing section according to the second embodiment;

FIG. 15 is a diagram showing a functional configuration of anon-volatile semiconductor storage device according to a thirdembodiment;

FIG. 16 is a flowchart showing an operation of the non-volatilesemiconductor storage device according to the third embodiment;

FIG. 17 is a diagram showing contents of notification by a notificationprocessing section according to the third embodiment;

FIG. 18 is a diagram showing a functional configuration of anon-volatile semiconductor storage device according to a fourthembodiment;

FIG. 19 is a flowchart showing an operation of the non-volatilesemiconductor storage device according to the fourth embodiment;

FIG. 20 is a diagram showing a threshold distribution of a plurality ofmemory cells according to the fourth embodiment;

FIG. 21 is a diagram showing the threshold distribution of the pluralityof memory cells according to the fourth embodiment; and

FIG. 22 is a diagram showing a functional configuration of anon-volatile semiconductor storage device in a variant according to thefirst embodiment to fourth embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, there is provided anon-volatile semiconductor storage device including a non-volatilememory, a monitoring section, a determining section, and a notificationprocessing section. The non-volatile memory includes a plurality ofmemory cells driven by word lines and a voltage generating section thatgenerates a read voltage to be applied to the word lines. The monitoringsection monitors a change in a threshold distribution of the pluralityof memory cells upon performing a read processing to read data from theplurality of memory cells by applying the read voltage to the wordlines. The determining section determines a degree of deterioration ofthe non-volatile memory in accordance with a monitoring result by themonitoring section. The notification processing section notifies a lifeof the non-volatile memory in accordance with a determining result bythe determining section.

Exemplary embodiments of a non-volatile semiconductor storage devicewill be explained below in detail with reference to the accompanyingdrawings. The present invention is not limited to the followingembodiments.

First Embodiment

In the present embodiment, in a non-volatile semiconductor storagedevice (for example, an SSD (Solid State Drive)) provided with anon-volatile memory (for example, a NAND type memory) including aplurality of memory cells of the present embodiment, a thresholddistribution of the plurality of memory cells upon performing a readprocessing for data in the non-volatile memory is monitored in order todetermine a degree of deterioration of the non-volatile memory.

After having monitored the threshold distribution of the plurality ofmemory cells, a monitored result and a threshold that is set in advanceare compared, and based on this comparison result, a degree ofdeterioration in blocks in the non-volatile memory is determined.Further, according to a determination result of the degree ofdeterioration, a determination is made on whether a life of thenon-volatile memory is ending or not, and if the life is ending, suchfact is notified to a user. The present embodiment provides such amethod of predicting lifetime.

Hereafter, although a case in which the non-volatile semiconductorstorage device is an SSD (Solid State Drive) will be explainedspecifically with reference to the drawings, the present embodiment issimilarly adaptable to a case in which the non-volatile semiconductorstorage device is for example a memory card.

Firstly, with reference to FIG. 1 to FIG. 4, a configuration of thenon-volatile semiconductor storage device and a configuration of a NANDtype flash memory and the like will be explained, and thereafter, withreference to FIG. 5 to FIG. 10, a configuration and an operation and thelike of the non-volatile semiconductor storage device that is onefeature of the present embodiment will be explained.

FIG. 1 is a block diagram showing an example of a configuration of anSSD 100A as the non-volatile semiconductor storage device. The SSD 100Aincludes a host connection interface (a host I/F 40 described later) forconnecting to a host device (hereafter abbreviated as host) 1. FIG. 1shows a case in which the host I/F 40 is a memory connection interfacesuch as an ATA interface (ATA I/F) 2. The SSD 100A is connected to thehost 1 such as a personal computer or a CPU core through the ATA I/F 2(host I/F 40), and functions as an external memory of the host 1.Further, the SSD 100A can send and receive data with adebug/manufacturing inspection apparatus 200 through a communicationinterface 3 such as an RS232C interface (RS232C I/F). Note that, thehost 1 includes a notification device 1 a.

The SSD 100A includes a NAND type flash memory (hereafter abbreviated asNAND memory) 20 as the non-volatile semiconductor memory including aplurality of memory cells, a drive control circuit 4 as the controller,a DRAM 30 as the volatile semiconductor memory, a power circuit 5, astate display LED 6, a temperature sensor 7 that detects temperatureinside the drive, a fuse 8, and a notification device 9 for statenotification.

The power circuit 5 generates a plurality of different internal directcurrent power voltages from an external direct current power suppliedfrom a power circuit on a host 1 side, and supplies these internaldirect current power voltages to respective circuits in the SSD 100A.Further, the power circuit 5 detects a rising edge of the externalpower, generates a power-on reset signal, and supplies the same to thedrive control circuit 4.

The fuse 8 is provided between the power circuit on the host 1 side andthe power circuit 5 inside the SSD 100A. When an over current issupplied from the external power circuit, the fuse 8 is cut, anderroneous operations of the internal circuits are prevented.

The NAND memory 20 includes for example four parallel operationalelements 20 a to 20 d that perform four parallel operations, and thesefour parallel operational elements 20 a to 20 d are connected to thedrive control circuit 4 by four channels (ch0 to ch3). Each of theparallel operational elements 20 a to 20 d is configured of a pluralityof banks capable of bank interleaving. That is, each of the paralleloperational elements are configured for example of four banks (Bank 0 toBank 3), and each bank is configured of a plurality of NAND memorychips, for example, two memory chips (Chip 0, Chip 1).

Each memory chip is for example divided into two districts (District) ofa plane 0 and a plane 1, each of which includes a plurality of physicalblocks. The plane 0 and plane 1 include peripheral circuits that areindependent of one another (such as a row decoder, a column decoder, apage buffer, and a data cache) and are capable of concurrentlyperforming erasing/writing/reading by using a double speed mode.

Accordingly, each NAND memory chip of the NAND memory 20 is capable ofparallel operations by the plurality of channels, bank interleavingoperations by the plurality of banks (that is, by the plurality of NANDdevices), interleaving operations by a plurality of chips in the samebank (that is, the same NAND device), and parallel operations by adouble speed mode using a plurality of planes. Note that, each memorychip may be divided into two or more plurality of planes, or may not bedivided at all.

The DRAM 30 functions as a memory for data transfer cache and operationdistrict between the host 1 and the NAND memory 20. Contents to bestored in the memory for operation district of the DRAM 30 may forexample be a master table (snap shot) in which respective managingtables stored in the NAND memory 20 are expanded upon a startup, or loginformation that is a change difference in a managing table.

Note that, instead of the DRAM 30, it is possible to use a non-volatilerandom access memory such as a FeRAM (Ferroelectric Random AccessMemory), an MRAM (Magnetoresistive Random Access Memory), a PRAM (Phasechange Random Access Memory) and the like. In using the non-volatilerandom access memory, a part or all of operations for saving therespective managing tables and the like in the NAND memory 20 upon powershutdown may be omitted.

The drive control circuit 4 performs a data transfer control between thehost 1 and the NAND memory 20 through the DRAM 30, and also controls therespective configurational elements in the SSD 100A. Further, the drivecontrol circuit 4 has functions to supply the state display LED 6 with astatus display signal, to receive the power-on reset signal from thepower circuit 5, and to supply a reset signal and a clock signal torespective sections in the drive control circuit 4 and the SSD 100A.

Each NAND memory chip is configured by arranging a plurality of physicalblocks that is a unit of data erasure.

FIG. 2A is a circuit diagram showing an example of a configuration ofone physical block included in the NAND memory. Each physical blockincludes (p+1) pieces of NAND strings arranged in order along an Xdirection (p is an integer equal to larger than 0). A select transistorST1 included in each NAND string has its drain connected to bit linesBL0 to BLp and its gate connected commonly to a select gate line SGD.Further, a select transistor ST2 has its source commonly connected to asource line SL and its gate commonly connected to a select gate lineSGS.

Each memory cell transistor (also referred to as a memory cell) MCT isconfigured of a MOSTFET (Metal Oxide Semiconductor Field EffectTransistor) having a laminated gate structure formed on a semiconductorsubstrate. The laminated gate structure includes a charge accumulatinglayer (floating gate electrode) formed on the semiconductor substratewith the gate insulating film and a control gate electrode formed on thecharge accumulating layer with an inter-gate insulating film. The memorycell transistors MCT change threshold voltages in accordance with anumber of electrons accumulated in the floating gate electrode, andstores data in accordance with this difference in the thresholdvoltages. The memory cell transistors MCT may be configured to store 1bit, or may be configured to store multilevel (data of 2 bits or more).

Further, the memory cell transistors MCT are not limited to theconfiguration having the floating gate electrode, and they may have astructure such as a MONOS (Metal-Oxide Nitride-Oxide-Silicon) typecapable of adjusting the threshold voltages by trapping charges at anitride film interface that is the charge accumulating layer. Similarlyfor the memory cell transistors MCT with the MONOS structure, they maybe configured to store 1 bit, or may be configured to store multilevel(data of 2 bits or more).

In each NAND string, (q+1) pieces of memory cell transistors MCT arearranged between the source of the select transistor ST1 and the drainof the select transistor ST2 so that their current paths are seriallyconnected. That is, the plurality of memory cell transistors MCT isserially connected in a Y direction in a form of sharing a diffusionregion (source region or drain region) among adjacent ones.

In each NAND string, the control gate electrodes are respectivelyconnected to word lines WL0 to WLq in an order from the memory celltransistor MCT located on the most select gate line SGD side and on.Accordingly, the drain of the memory cell transistor MCT connected tothe word line WL0 is connected to the source of the select transistorST1, and the source of the memory cell transistor MCT connected to theword line WLq is connected to the drain of the select transistor ST2.

The word lines WL0 to WLq commonly connect the control gate electrodesof the memory cell transistors MCT between the NAND strings in thephysical block. That is, the control gate electrodes of the memory celltransistors MCT that are in the same row in a block are connected to thesame word line WL. These (p+1) pieces of memory cell transistors MCTconnected to the same word line WL are handled as one page (physicalpage), and the writing of data and reading of data are performed foreach of these physical pages.

Further, the bit lines BL0 to BLp commonly connect the drains of theselect transistors ST1 between blocks. That is, the NAND strings in thesame column in the blocks are connected to the same bit line BL.

FIG. 2B is a schematic diagram showing a threshold distribution in afour-level data storing scheme which for example stores 2 bits in onememory cell transistor MCT. The four-level data storing scheme iscapable of retaining one of four-level data “xy” defined by upper pagedata “x” and lower page data “y” in the memory cell transistors MCT.

For example, data “11”, “01”, “00” and “10” are allotted to thefour-level data “xy” in an order of the threshold voltages of therespective memory cell transistors MCT. The data “11” is an erased statein which the threshold voltage of the memory cell transistor MCT is forexample caused to be negative. Note that, a data allotting rule is notlimited to this. Further, it may have a configuration in which a storageof 3 bits or more is performed in one memory cell transistor MCT.

In the writing operation of the lower page, data “10” is written byselectively writing lower bit data “y” to the memory cell transistor MCTwith the data “11” (erased state). A threshold distribution of data “10”of the upper page before the writing is positioned at an intermediateposition between threshold distributions of the data “01” and the data“00” of the upper page after the writing, or may be broader than thethreshold distribution of the upper page after the writing. In thewriting operation of the upper page, data “01” and data “00” are writtenin the memory cell of the data “11” and the memory cell of the data “10”respectively by selectively writing upper bit data “x”. A simulation SLCmode performs writing by using only the lower page. The writing of thelower page is fast compared to the writing of the upper page.

FIG. 3 is a block diagram showing an example of a hardware internalconfiguration of the drive control circuit 4. The drive control circuit4 includes a data accessing bus 101, a first circuit controlling bus102, and a second circuit controlling bus 103. A processor 104 thatcontrols an entirety of the drive control circuit 4 is connected to thefirst circuit controlling bus 102. A boot ROM 105 is connected to thefirst circuit controlling bus 102 via a ROM controller 106. A bootprogram that boots the respective managing programs (FW: firm wares)stored in the NAND memory 20 is stored in the boot ROM 105.

Further, a clock controller 107 is connected to the first circuitcontrolling bus 102. This clock controller 107 receives a power-on resetsignal from the power circuit 5 shown in FIG. 1, and supplies a resetsignal and the clock signal to the respective sections.

The second circuit controlling bus 103 is connected to the first circuitcontrolling bus 102. An I²C circuit 108 for receiving data from thetemperature sensor 7 as shown in FIG. 1, a parallel IO (PIO) circuit 109that supplies a status display signal to the status display LED 6, and aserial IO (SIO) circuit 110 that controls the RS232C I/F 3 are connectedto the second circuit controlling bus 103.

A SATA interface controller (SATA controller) 111 a, a PATA interfacecontroller (PATA controller) 111 b, a second ECC (Error Checking andCorrection) circuit 112, a controller 113 that is the controller for theNANDs, and a DRAM controller 114 are connected to both the dataaccessing bus 101 and the first circuit controlling bus 102. The SATAcontroller 111 a sends and receives data and command to and from thehost 1 through a SATA interface (a part of the ATA interface 2 shown inFIG. 1). The PATA controller 111 b sends and receives data and commandto and from the host 1 through a PATA interface (a part of the ATAinterface 2 shown in FIG. 1). A SRAM 115 that is used as the dataoperational district and a firm ware expanding district is connected tothe data accessing bus 101 via a SRAM controller 116. The firm warestored in the NAND memory 20 is transferred to the SRAM 115 upon theboot up by the boot program stored in the boot ROM 105.

The controller 113 includes a NAND I/F 117, a first ECC circuit 118, anda DMA controller 119 for a DMA transfer control. The NAND I/F 117performs an interface process with the NAND memory 20. The DMAcontroller 119 for the DMA transfer control performs an access controlbetween the NAND memory 20 and the DRAM 30. The first ECC circuit 118performs encoding of a second correction code, and performs encoding anddecoding of a first error correction code. The second ECC circuit 112performs decoding of the second error correction code. The first errorcorrection code and the second error correction code are for examplehumming codes, BCH (Bose Chaudhuri Hocquenghem) codes, RS (Reed Solomon)codes, or LDPC (Low Density Parity Check) codes and the like, and acorrection ability of the second error correction code is higher than acorrection ability of the first error correction code.

As shown in FIG. 1, in the NAND memory 20, the four parallel operationalelements 20 a to 20 d are connected to the controller 113 inside thedrive control circuit 4 through the four channels of the respectiveplurality of bits, and it is possible to operate the four paralleloperational elements 20 a to 20 d in parallel. Further, the NAND memory20 of each channel is divided into four banks capable of bankinterleaving, and it is also possible to simultaneously access the plane0 and the plane 1 of each memory chip. Accordingly, for each channel, itis possible to substantially control a maximum of eight physical blocks(four banks×two planes) simultaneously. That is, it is possible toperform processes such as writing to the maximum of eight physicalblocks simultaneously.

FIG. 4 is a functional block diagram showing an example of one NANDmemory chip (semiconductor non-volatile memory) shown in FIG. 1.

A memory cell array 201 includes a plurality of bit lines, a pluralityof word lines, and a common source line, and memory cells formed of forexample EEPROM cells and capable of having their data electricallyrewritten are arranged in a matrix (so as to configure plural rows andplural columns). A bit line control circuit 202 for controlling the bitlines and a word line control circuit 206 for controlling the word linesare connected to this memory cell array 201.

The bit line control circuit 202 is connected to the plural rows ofmemory cells through the plural bit lines. The bit line control circuit202 can read data in the memory cells through the bit lines, detectstates of the memory cells through the bit lines, and write the memorycells by applying a write control voltage to the memory cells throughthe bit lines. A column decoder 203 and a data input/output buffer 204are connected to the bit line control circuit 202.

A data storing circuit in the bit line control circuit 202 is selectedby the column decoder 203. Data of the memory cells read by the datastoring circuit is output outside through the data input/output buffer204 from a data input/output terminal 205. The data input/outputterminal 205 is connected to the drive control circuit 4 that is outsidethe memory chip.

This drive control circuit 4 receives the data output from the datainput/output terminal 205. Further, the drive control circuit 4 outputsvarious commands CMD that control the operation of the NAND type flashmemory, an address ADD, and data DT. Write data input from the drivecontrol circuit 4 to the data input/output terminal 205 is supplied tothe data storing circuit selected by the column decoder 203 through thedata input/output buffer 204, and the commands and the address aresupplied to a control signal and control voltage generating circuit 207.

The word line control circuit 206 is connected to plural rows of memorycells through plural word lines. This word line control circuit 206selects a word line in the memory cell array 201, and applies a voltagethat is necessary for reading, writing or erasing to the memory cellsthrough the selected word line.

The memory cell array 201, the bit line control circuit 202, the columndecoder 203, the data input/output buffer 204, and the word line controlcircuit 206 are connected to the control signal and control voltagegenerating circuit 207, and are controlled by this control signal andcontrol voltage generating circuit 207.

The control signal and control voltage generating circuit 207 isconnected to a control signal input terminal 208, and is controlled byvarious control signals such as an ALE (Address Latch Enable), a CLE(Command Latch Enable), a WE (Write Enable) that are input from thedrive control circuit 4 through the control signal input terminal 208 aswell as the commands CMD input from the drive control circuit 4 throughthe data input/output terminal 205 and the data input/output buffer 204.

This control signal and control voltage generating circuit 207 generatesthe voltage to be supplied to the word lines and the bit lines upon datawriting, and also generates a voltage to be supplied to a well. Thecontrol signal and control voltage generating circuit 207 includes abooster circuit such as a charge pump circuit, and is configured capableof generating the write voltage, the read voltage and the erase voltage.

Further, as will be described later, the control signal and controlvoltage generating circuit 207 is capable of changing a level of theread voltage. That is, the control signal and control voltage generatingcircuit 207 has a function to shift the voltage to be applied to theword line upon the read operation (that is, the read voltage) to a +direction or a − direction upon receiving the various control signalsinput through the control signal input terminal 208 and the commands CMDinput through the data input/output terminal 205 and the datainput/output buffer 204.

The bit line control circuit 202, the column decoder 203, the word linecontrol circuit 206, and the control signal and control voltagegenerating circuit 207 configure a write circuit and a read circuit.

The memory cell array 201 includes a storage district 201-1 for storingan ECC (Error Correction Code) in addition to a storage district forstoring main data.

In the NAND memory 20 of the SSD 100A, in cases such as when the writtendata is not accessed over a long period of time, a phenomenon may occurin each memory cell transistor MT in which electrons are discharged fromits floating gate, and the threshold voltage is lowered (see FIG. 7 andFIG. 8). This phenomenon tends to occur easily when the gate insulatingfilm of each memory cell transistor MT is deteriorated by for example anincrease in a number of writing/erasure, the increase in the dataretaining period, the increase in the surrounding temperature, and thelike. Due to this, since a correlation exists between the changes in thethreshold distribution of the plurality of memory cells (that is, theplurality of memory cell transistors MT) and the deterioration of theplurality of memory cells, the present embodiment for example utilizesthis correlation to monitor a degree of deterioration of the NAND memory20.

Next, a configuration of the SSD 100A will be explained with referenceto FIG. 5. FIG. 5 is a functional block diagram showing an example of afunctional configuration of the SSD as the non-volatile semiconductorstorage device according to the first embodiment.

The SSD 100A includes a controller 10A (drive control circuit 4), theNAND memory 20, the DRAM 30, and the host I/F 40.

The NAND memory 20 stores user data designated by the host 1, and storesmanaging information managed by the DRAM 30 for a backup. The NANDmemory 20 includes the memory cell array in which the plurality ofmemory cells is arranged in a matrix, and each memory cell is capable ofa multilevel storage by using an upper page and a lower page. The NANDmemory 20 is configured of a plurality of NAND memory chips, and eachNAND memory chip is configured by arranging a plurality of physicalblocks, which is the unit of data erasure. Further, the writing of thedata and the reading of the data are performed in the NAND memory 20 foreach physical page. The physical block is configured of a plurality ofphysical pages.

A physical block address is a fixed address allotted to a physicalblock. A logical block address is an address designated by the host 1and is a changeable address allotted to a logical block, which is avirtual block. The logical block refers for example to a virtual blockthat is configured by combining a plurality of physical blocks.

The DRAM 30 is used as a storing section for data transfer andinformation management. Specifically, the storing section for the datatransfer (a cache district for the data transfer) is used fortemporarily storing data to which a write request had been made from thehost 1 before writing it into the NAND memory 20, or for temporarilystoring data to which a read request has been made from the host 1 afterhaving read it from the NAND memory 20. Further, as the storing sectionfor the information management, it is used for storing various types ofmanaging information including managing information for managing storingposition of the data stored in the NAND memory 20 (such as anassociation of a logical address and physical addresses), managinginformation for managing a reading number to be described later, in thephysical block units.

A read voltage managing table (not shown) and a reading number managingtable (not shown) are stored in the NAND memory 20, and these tables areread from the NAND memory 20 upon a system boot up, and are stored inthe DRAM 30. The read voltage managing table for example has a tablestructure that indicates a read voltage for each address specifyingrespective word lines in one memory chip (that is, address supplied fromthe control signal and control voltage generating circuit 207 to theword line control circuit 206). That is, according to the read voltagemanaging table, the read voltage is recorded for each physical page.Note that, in the case of employing the multilevel-storing memory cells,the read voltage managing table is prepared for each of a plurality ofthresholds. The reading number managing table is a table for managingthe reading number to be described later in the physical block units(physical block address units), and the latest reading number that hadactually been monitored is recorded as the reading number.

The controller 10A contains software for performing the data transfercontrol between the host 1 and the NAND memory 20 through the DRAM 30,and the control of the respective configurational elements in the SSD100A. The controller 10A and the NAND memory 20 are connected by acontrol I/O line (Ctrl I/O) for inputting and outputting commands,addresses, data and the like, and a ready/busy signal (Ry/By) thatindicates whether the NAND memory 20 is in a ready state or a busy stateis input from the NAND memory 20 to the controller 10A. The controller10A is a functional configurational element, and for example includes atleast a part of at least one of the processor 104 and a controller 113as shown in FIG. 3.

The controller 10A includes a read/write controlling section 11, amonitoring section 12, a determining section 13, and a notificationprocessing section 15.

The read/write controlling section 11 performs read/write controls ofdata with the NAND memory 20 by using the cache district of the DRAM 30based on the managing information stored in the DRAM 30.

The monitoring section 12 monitors changes in the threshold distributionof the plurality of memory cells (plurality of memory cell transistorsMCT) upon performing the read processing. This threshold distribution ofthe plurality of monitored memory cells for example includes a readingnumber (retry number) until the read processing succeeds in repeatedlyperforming the read processing (performing retry read processing).

That is, as shown in FIG. 7, the threshold distribution of the pluralityof memory cells changes from its distribution in a fresh state shown insolid lines to a distribution after a long period of time has elapsedsince its first use shown in dotted lines. In comparing the thresholddistribution shown in the dotted lines and levels of read voltages VA,VB, VC, it can be understood that lower voltage side portions of thethreshold distribution approach closer to the levels of the readvoltages VA, VB, VC than in the fresh state. The threshold distributionshown in the dotted lines is in fact not fixed, and wavers to the lowervoltage side as well as a higher voltage side. Thus, as the lowervoltage side portions of the threshold distribution approaches closer tothe levels of the read voltages VA, VB, VC, the reading number (retrynumber) until the read processing succeeds in repeatedly performing theread processing (performing the retry read processing) tends toincrease. Due to this, by monitoring the change in the reading number,the change in the threshold distribution can be monitored. As shown inFIG. 7, a closeness of the read voltage and the level may vary dependingon the data. In FIG. 7, a case in which following formula 1 stands validis shown as an example.Reading Number of Data “10”<Reading Number of Data “00”<Reading Numberof Data “01”  Formula 1

Further, the phenomenon related to the lowering of the thresholdvoltages is not limited to the case with the memory cells (MLC: MultiLevel Cells) that store data of 2 bits or more (multilevel) as shown inFIG. 7; as shown in FIG. 8, the same applies to the case with memorycells (SLC: Single Level Cells) that store data of 1 bit (two-level).Note that, in the case of the MLCs, due to a restriction regarding amargin among the threshold distribution being severe compared to thecase of the SLCs, an influence of the lowering of the threshold voltagesis more prominent.

Specifically, the monitoring section 12 includes a reading numbermonitoring section 121. The reading number monitoring section 121measures the reading number in repeatedly performing the read processingin the physical block units until the read processing succeeds. Forexample, if a process called ware leveling in which variation in thenumber of writing/erasure among blocks is reduced by evenly dispersingdata updating sections is being performed in the SSD 100A, the readingnumber monitoring section 121 measures the reading number every time theread processing is performed for a representative physical page in thephysical block that is a measuring target (that is, the plurality ofmemory cell transistors MCT driven by the selected word line). Forexample, the reading number monitoring section 121 receives anotification that the read processing has been performed every time theread processing is performed for this representative physical page, andincrements a count value of reading number Nw of the representativephysical page. The reading number monitoring section 121 supplies theincremented reading number to the determining section 13, and alsorecords it to an entry of a corresponding physical block in theaforementioned reading number managing table.

More specifically, every time the read processing is performed, thereading number monitoring section 121 receives a determination result onwhether the read processing succeeded or not for each bit in therepresentative physical page (each memory cell) from at least one of thefirst ECC circuit 118 and the second ECC circuit 112.

For example, the reading number monitoring section 121 counts thereading number for each of the plurality of memory cells in therepresentative physical page, and obtains the reading number for each ofthe plurality of memory cells.

Alternatively, for example, the reading number monitoring section 121may obtain the reading number for the representative physical page bystatistically processing the reading numbers of the plurality of memorycells. The statistic processing may for example be a simple average, anweighted mean, a selection of a measure of central tendency, a selectionof median, and the like. The reading number monitoring section 121determines the obtained reading number as the reading number of thephysical block corresponding to the representative physical page.

The determining section 13 receives a monitoring result by themonitoring section 12. The determining section 13 determines the degreeof deterioration of the NAND memory 20 in accordance with the monitoringresult from the monitoring section 12. Specifically, the determiningsection 13 compares the reading number monitored by the monitoringsection 12 with a predetermined threshold, and determines the degree ofdeterioration of each block in the NAND memory 20 according to thatcomparison result. The determining section 13 supplies a determinationresult to the notification processing section 15.

For example, the determining section 13 compares the monitored readingnumbers with the predetermined threshold in block units. That is, thedetermining section 13 identifies a distribution of the reading numbersof the plurality of memory cells for the block that is a target ofdetermination from the monitoring result by the monitoring section 12(see FIG. 9), and specifies a frequency of the reading numbers that isat or more than a number threshold Nth among the distribution of thereading numbers of the plurality of memory cells. The determiningsection 13 compares the specified frequency with a frequency thresholdFth, and determines whether the life of the block that is the target ofdetermination is nearing an end or not in accordance with thatcomparison result.

Alternatively, for example, the determining section 13 may compare themonitored reading number with the predetermined threshold in the blockunits. That is, the determining section 13 may identify the readingnumber of the block that is the target of determination from themonitoring result by the monitoring section 12, compare the readingnumber of the block that is the target of determination with the numberthreshold Nth, and determine whether the life of the block that is thetarget of determination is nearing the end or not in accordance withthat comparison result.

The notification processing section 15 receives the determination resultfrom the determining section 13. The notification processing section 15notifies the life of the NAND memory 20 in accordance with thedetermination result by the determining section 13 by using anotification device 21. That is, the notification processing section 15generates notification information indicating contents to be notified inaccordance with the determination result from the determining section13, and supplies the same to the notification device 21. In response tothis, the notification device 21 performs a notification regarding thelife of the NAND memory 20 to the user in compliance with thenotification information. The notification device 21 corresponds forexample to the LED 6, the notification device 9, the notification device1 a in FIG. 1, and the like. The notification by the notification device21 includes for example a notification by turning on or blinking the LED6, a notification by a display on a screen of the notification device 9or the notification device 1 a, a notification by an audio output from aspeaker of the notification device 9 or the notification device 1 a, anotification by a buzzer of the notification device 9 or thenotification device 1 a, and the like.

For example, the notification processing section 15 generatesnotification information including a graph shown in FIG. 9 for eachblock in the NAND memory 20, supplies the same to the notificationdevice 21, and notifies that graph to the user as the informationindicating whether the life is nearing the end or not. That is, thenotification device 21 may for example be a display device, and thenotification processing section 15 may notify to the user that thelifetime of a block is nearing its end by displaying a bar graph showingthe distribution of the reading numbers of the plurality of memory cellsand displaying that a portion exceeding the frequency threshold Fth andthe number threshold Nth exists in a highlighted display.

Alternatively, for example, the notification processing section 15 maygenerate notification information including a message indicating whetherthe life is nearing to its end or not for each block in the NAND memory20, supply the same to the notification device 21, and notify thatmessage to the user as the information indicating whether the life isnearing its end or not. That is, the notification device 21 may forexample be a display device, and the notification processing section 15may notify to the user that the lifetime of the block is nearing its endby displaying the message indicating that the life is nearing to itsend.

Next, an operation of the SSD 100A will be explained with reference toFIG. 6. FIG. 6 is a flowchart showing the operation of the SSD 100A.

Upon the read processing, the drive control circuit 4 references theread voltage managing table and sets a read voltage (step S1).Specifically, the drive control circuit 4 searches the read voltagemanaging table with a read target address as a search key, and obtainsthe read voltage. If the obtained read voltage is a default value, anormal read command is sent to a read target memory chip. On the otherhand, if the obtained read voltage is not the default value, a commandto perform the reading with the obtained read voltage (shift readcommand) is sent to the read target memory chip. Thereafter, the SSD 100repeatedly performs a loop processing of step S2 to step S5 until thereading succeeds.

In this loop processing, the read target memory chip performs the readprocessing of data by applying the read voltage designated by thecommand sent from the drive control circuit 4 to a target word line fromthe word line control circuit 206 (step S2). The read data is sent tothe drive control circuit 4. The drive control circuit 4 performs anerror correction processing by using at least one of the second ECCcircuit 112 and the first ECC circuit 118 (step S3). Next, the drivecontrol circuit 4 determines whether the error correction failed (errorcorrection process error), that is, whether the error correction by thefirst ECC circuit 118 and the second ECC circuit 112 failed (step S4).

If the error correction process error is detected (step S4: Yes), themonitoring section 12 of the drive control circuit 4 increments thecount value of the reading number (step S11). The determining section 13of the drive control circuit 4 determines whether the count value of thereading number, that is, a number of times the loop processing of stepS2 to step S5 has been performed exceeds an upper limit set in advanceor not (step S5). If the number of the loops exceeds the upper limit(step S5: Yes), the read processing is cancelled as the reading havingfailed (step S8), and proceeds the process to step S10. If the number ofthe loops does not exceed the upper limit (step S5: No), the drivecontrol circuit 4 returns the process to step S2, and causes the retryread processing to be performed.

In step S4, if the error correction process error is not detected (stepS4: No), the monitoring section 12 of the drive control circuit 4 storesthe reading number by updating the reading number managing table by thecount value of the reading number (step S6), and completes the retryread processing as the reading having succeeded (step S7).

When a notification that the retry read processing is completed isreceived, the determining section 13 of the drive control circuit 4performs a determination on whether the life is nearing the end or notfor the target block (step S9).

For example, the determining section 13 identifies the distribution ofthe reading numbers of the plurality of memory cells for the block thatis the target of determination from the monitoring result by themonitoring section 12 (see FIG. 9), and specifies the frequency of thereading number that is at or more than the number threshold Nth fromamong the distribution of the reading numbers of the plurality of memorycells. The determining section 13 compares the specified frequency withthe frequency threshold Fth. If the specified frequency is at or morethan the frequency threshold Fth, the determining section 13 proceedsthe process to step S10 by determining that the life of the block thatis the target of determination is nearing the end (step S9: Yes). If thespecified frequency is less than the frequency threshold Fth, thedetermining section 13 ends the process by determining that the life ofthe block that is the target of determination is not nearing the end(step S9: No).

Alternatively, for example, the determining section 13 may compare themonitored reading number with the predetermined threshold in blockunits. That is, the determining section 13 may identify the readingnumber of the block that is the target of determination from themonitoring result by the monitoring section 12, and compare the readingnumber of the block that is the target of determination with the numberthreshold Nth. If the reading number of the block that is the target ofdetermination is at or more than the number threshold Nth, thedetermining section 13 may proceed the process to step S10 bydetermining that the life of the block that is the target ofdetermination is nearing the end (step S9: Yes). If the reading numberof the block that is the target of determination is less than the numberthreshold Nth, the determining section 13 may end the process bydetermining that the life of the block that is the target ofdetermination is not nearing the end (step S9: No).

Then, the notification processing section 15 of the drive controlcircuit 4 receives the determination result from the determining section13. The notification processing section 15 notifies the life of the NANDmemory 20 in accordance with the determination result by the determiningsection 13 by using the notification device 21 (step S10). That is, thenotification processing section 15 generates the notificationinformation indicating the contents to be notified in accordance withthe determination result by the determining section 13, and supplies thesame to the notification device 21. In response to this, thenotification device 21 performs the notification regarding the life ofthe NAND memory 20 to the user in compliance with the notificationinformation.

For example, the notification processing section 15 generates thenotification information including the graph shown in FIG. 9 for eachblock in the NAND memory 20, supplies the same to the notificationdevice 21, and notifies that graph to the user as the informationindicating whether the life is nearing its end or not. That is, thenotification device 21 may for example be a display device, and thenotification processing section 15 notifies to the user that thelifetime of a block is nearing its end by displaying the bar graphshowing the distribution of the reading numbers of the plurality ofmemory cells and displaying that a portion exceeding the frequencythreshold Fth and the number threshold Nth exists in the highlighteddisplay.

Alternatively, for example, the notification processing section 15 maygenerate the notification information including the message indicatingwhether the life is nearing to its end or not for each block in the NANDmemory 20, supply the same to the notification device 21, and notifythat message to the user as the information indicating whether the lifeis nearing its end or not. That is, the notification device 21 may forexample be a display device, and the notification processing section 15may notify to the user that the lifetime of the block is nearing its endby displaying the message indicating that the life is nearing to itsend.

Note that, in the above, a case in which the number threshold Nth usedin the determination on whether the life of the block that is the targetof determination is nearing the end or not in step S9 is lower than theupper limit used in the determination on whether the reading failed ornot in step S5 is explained. In this case, if the process proceeds tostep S8 by assuming Yes in step S5, the reading number is naturally ator more than the number threshold Nth, so the process proceeds to stepS10 without performing the determination on whether the life is nearingthe end or not (step S9).

Alternatively, the number threshold Nth used in the determination onwhether the life of the block that is the target of determination isnearing the end or not may be equal to the upper limit used in thedetermination on whether the reading failed or not in step S5. In thiscase, since the determination processing in step S5 serves the role ofthe determination processing of step S9, a process that has been changedby omitting step S9 in FIG. 6 and ending the process after step S7 willbe performed.

Further, although the data written in the NAND memory 20 has beenexplained as having the ECC district for each page, the unit size of thedata having the ECC district may be a plurality of pages. In this case,the reading number managing table will have the reading number recordedfor every plurality of pages, and the process shown in FIG. 6 regardingthe read processing may be performed for each data for the plurality ofpages.

The address to be supplied to the word line control circuit 206 includesa block address for identifying a block that is a target of access amongthe memory cell array 201 as its upper address, and a page address foridentifying a word line that is the target of access in the block thatis the target of access as its lower address. In the read voltagemanaging table, the read voltage may be managed for each block address.By configuring as above, a size of the read voltage managing table canbe reduced.

Accordingly, in the first embodiment, the monitoring section 12 monitorsthe change in the threshold distribution of the plurality of memorycells upon performing the read processing to read data from theplurality of memory cells by applying the read voltage to the wordlines. The determining section 13 determines the degree of deteriorationof each block in the NAND memory 20 in accordance with the monitoringresult by the monitoring section 12. The notification processing section15 notifies the life of the NAND memory 20 in accordance with thedetermination result by the determining section 13 by using thenotification device 21. Due to this, the life of each block in the NANDmemory 20 can be predicted, and as the result of the prediction, forexample, whether the life is nearing the end or not for each block inthe NAND memory 20 can be notified to the user. As a result, since theuser can recognize when the life nears the end for each block in theNAND memory 20, the user can for example replace the semiconductorintegrated circuit device whose life is nearing to the end. Due to this,an occurrence in an abrupt and unrecognized loss of data that had beenstored in the NAND memory 20 can be reduced.

Further, in the first embodiment, the monitoring section 12 monitors thereading number (retry number) until the read processing succeeds inrepeatedly performing the read processing (in performing the retry readprocessing) under the state in which the read voltage is kept constant.Due to this, the change in the threshold distribution of the pluralityof memory cells upon performing the read processing can be monitoredwith a simple process.

Second Embodiment

Next, a non-volatile semiconductor storage device according to a secondembodiment will be explained. Hereinbelow, parts different from thefirst embodiment will mainly be explained.

In the first embodiment, the read processing had been repeated (theretry read processing had been performed) under the state in which theread voltage is kept constant. However, in the second embodiment, theread processing will be repeated (the retry shift read processing willbe performed) while shifting the read voltage gradually toward onedirection. Specifically, as shown in FIG. 10, a controller 10B of an SSD100B includes a monitoring section 12B and a changing section 14B.

The changing section 14B references change information 141B and changesthe read voltage such that the read voltage is gradually shifted to onedirection (for example, lowering direction). Specifically, the changeinformation 141B includes a voltage changing amount that should beshifted per one time. The changing section 14B references the changeinformation 141B, and causes the read voltage to shift by thepredetermined voltage changing amount each time the read processing isperformed. The changing section 14B supplies the read voltage after thechange, or a command corresponding to the read voltage after the changeto a NAND memory 20.

The monitoring section 12B monitors a change in a threshold distributionof a plurality of memory cells (plurality of memory cell transistorsMCT) in performing the read processing by monitoring a reading numberuntil the read processing succeeds in repeatedly performing the readprocessing while gradually shifting the read voltage (in performing theretry shift read processing). Alternatively, the monitoring section 12Bmay monitor the change in the threshold distribution of the plurality ofmemory cells (plurality of memory cell transistors MCT) in performingthe read processing by monitoring a read voltage when the readprocessing succeeded in repeatedly performing the read processing whilegradually shifting the read voltage (in performing the retry shift readprocessing).

That is, as shown in FIG. 12, the threshold distribution of theplurality of memory cells changes from a distribution in a fresh stateas shown in solid lines to a distribution after a long period of timehas elapsed since its first use shown in dotted lines. When thethreshold distribution shown in dotted lines and levels of read voltagesVA, VB, VC are compared, since memory cells with lower thresholdvoltages than the levels of the read voltages VA, VB, VC occur, theremay be cases in which data cannot be correctly read by using a defaultread voltage. Thus, the reading number in performing the retry shiftread processing tends to increase as the threshold distribution lowersto a lower voltage side. Thus, by monitoring the change in the readingnumber of the retry shift read processing, the change in the thresholddistribution can be monitored. Alternatively, as the thresholddistribution lowers to the lower voltage side, a changing amount of theread voltage from a default value in performing the retry shift readprocessing may tend to increase. Thus, by monitoring the changing amountof the read voltage from the default value in the retry shift readprocessing, the change in the threshold distribution can be monitored.

As shown in FIG. 12, a degree of decrease in the threshold distributionmay differ among data. For example, for data “10”, the read voltage isgradually shifted from VA to VA1 and then VA2, and the reading succeedswith the read voltage VA2. The reading number of the data “10” is forexample 2. For example, for data “00”, the read voltage is graduallyshifted from VB to VB1 through VB6, and the reading succeeds with theread voltage VB6. The reading number of the data “00” is for example 6.For example, for data “01”, the read voltage is gradually shifted fromVC to VC1 through VC7, and the reading succeeds with the read voltageVC7. The reading number of the data “01” is for example 7. That is, inFIG. 12, an example is given for a case in which the following formula 2stands valid.Reading Number of Data “10”<Reading Number of Data “00”<Reading Numberof Data “01”  Formula 2

Alternatively, a changing amount of the read voltage with which thereading of the data “10” had succeeded from a default value is ΔVA1. Achanging amount of the read voltage with which the reading of the data“00” had succeeded from the default value is ΔVB1 (>ΔVA1). A changingamount of the read voltage with which the reading of the data “01” hadsucceeded from the default value is ΔVC1 (>ΔVB1). That is, in FIG. 12,an example is given for a case in which the following formula 3 standsvalid.Changing Amount ΔVA1 of Read Voltage of Data “10”<Changing Amount ΔVB1of Read Voltage of Data “00”<Changing Amount ΔVC1 of Read Voltage ofData “01”   Formula 3

Further, the phenomenon related to the lowering of the threshold voltageis not limited to the case of the memory cells (MLCs: Multi Level Cells)storing data of 2 bits or more (multilevel) as shown in FIG. 12; itapplies similarly to memory cells (SLCs: Single Level Cells) storingdata of 1 bit (two-level) as shown in FIG. 13.

Specifically, the monitoring section 12B includes a reading numbermonitoring section 121B or a read voltage monitoring section 122B.

The reading number monitoring section 121B measures the reading numberuntil the read processing succeeds in repeatedly performing the readprocessing in the block units. For example, in a case where a processcalled wear leveling that reduces a variety in number of writing/erasureamong the blocks by evenly dispersing data updating sections is beingperformed in the SSD 100B, the reading number monitoring section 121Bmeasures the reading number for each read processing from arepresentative physical page in a physical block that is the measuringtarget (that is, a plurality of memory cell transistors MCT driven bythe selected word line). The reading number monitoring section 121Bsupplies the measured result to the determining section 13 as themonitoring result.

The reading number monitoring section 121B measures the read voltagewhen the read processing succeeds in repeatedly performing the readprocessing in the block units. For example, in the case where theprocess called the wear leveling that reduces the variety in the numberof writing/erasure among the blocks by evenly dispersing the dataupdating sections is being performed in the SSD 100B, the reading numbermonitoring section 121B measures the read voltage for each readprocessing from the representative physical page in the physical blockthat is the measuring target (that is, the plurality of memory celltransistors MCT driven by the selected word line). Then, the readingnumber monitoring section 121B calculates the changing amount of themeasured read voltage from the default value, and supplies the same tothe determining section 13 as the monitoring result.

Further, as shown in FIG. 11, an operation of the SSD 100B differs fromthe first embodiment in the following points.

As a result of the determination in step S5, if the number of the loopshas not exceeded the upper limit (step S5: No), the changing section 14Bof the drive control circuit 4 performs an adjustment to lower the valueof the read voltage from the value used in step S2 by a predeterminedstep width (step S21). This is because the threshold voltage has atendency to lower as the time passes. The value of the read voltageafter the adjustment is sent to the memory chip (NAND memory 20)together with a shift read command, and the memory chip transitions tothe process of step S2 and performs the read processing by using theread voltage that has been newly sent.

In step S4, if the error correction process error is not detected (stepS4: No), the monitoring section 12B of the drive control circuit 4updates the reading number managing table by the count value of thereading number and stores the reading number, and updates the readvoltage managing table with the used read voltage (step 22).

Alternatively, the monitoring section 12B of the drive control circuit 4may update the read voltage changing amount managing table by thechanging amount of the read voltage when the read processing succeeded,store the changing amount of the read voltage, and update the readvoltage managing table with the used read voltage (step 22). Note that,the read voltage changing amount managing table is a table for managingthe changing amount of the read voltage when the read processingsucceeded in block units (physical block address units); and as thechanging amount of the read voltage, the changing amount of the latestread voltage that had actually been monitored is recorded. The readvoltage changing amount managing table is for example stored in the NANDmemory 20.

When a notification regarding that the retry shift read processing iscompleted is received, the determining section 13 of the drive controlcircuit 4 determines whether the life of the target block is nearing theend or not (step S23).

For example, the determining section 13 identifies the distribution ofthe reading numbers of the plurality of memory cells for the block thatis the target of determination from the monitoring result by themonitoring section 12B (see FIG. 9), and specifies the frequency of thereading number that is at or more than the number threshold Nth fromamong the distribution of the reading numbers of the plurality of memorycells. The determining section 13 compares the specified frequency withthe frequency threshold Fth. If the specified frequency is at or morethan the frequency threshold Fth, the determining section 13 proceedsthe process to step S24 by determining that the life of the block thatis the target of determination is nearing the end (step S23: Yes). Ifthe specified frequency is less than the frequency threshold Fth, thedetermining section 13 ends the process by determining that the life ofthe block that is the target of determination is not nearing the end(step S23: No).

Alternatively, for example, the determining section 13 may compare themonitored reading number of the block that is the target ofdetermination with a predetermined threshold in block units. That is,the determining section 13 may identify the reading number of the blockthat is the target of determination from the monitoring result by themonitoring section 12B, and compare the reading number of the block thatis the target of determination with the number threshold Nth. If thereading number of the block that is the target of determination is at ormore than the number threshold Nth, the determining section 13 proceedsthe process to step S24 by determining that the life of the block thatis the target of determination is nearing the end (step S23: Yes). Ifthe reading number of the block that is the target of determination isless than the number threshold Nth, the determining section 13 ends theprocess by determining that the life of the block that is the target ofdetermination is not nearing the end (step S23: No).

Alternatively, for example, the determining section 13 identifies thedistribution of the changing amounts of the read voltage of theplurality of memory cells for the block that is the target ofdetermination from the monitoring result by the monitoring section 12B(see FIG. 14), and specifies a frequency of the changing amounts of theread voltage that is at or more than a changing amount thresholdΔVread-th from among the distribution of the changing amounts of theread voltage of the plurality of memory cells. The determining section13 compares the specified frequency with the frequency threshold Fth. Ifthe specified frequency is at or more than the frequency threshold Fth,the determining section 13 proceeds the process to step S24 bydetermining that the life of the block that is the target ofdetermination is nearing the end (step S23: Yes). If the specifiedfrequency is less than the frequency threshold Fth, the determiningsection 13 ends the process by determining that the life of the blockthat is the target of determination is not nearing the end (step S23:No).

Alternatively, for example, the determining section 13 may compare thechanging amount of the read voltage of the block that is the target ofdetermination with a predetermined threshold in the block units. Thatis, the determining section 13 may identify the changing amount of theread voltage of the block that is the target of determination from themonitoring result by the monitoring section 12B, and compare thechanging amount of the read voltage of the block that is the target ofdetermination with the change amount threshold ΔVread-th. If thechanging amount of the read voltage of the block that is the target ofdetermination is at or more than the change amount threshold ΔVread-th,the determining section 13 proceeds the process to step S24 bydetermining that the life of the block that is the target ofdetermination is nearing the end (step S23: Yes). If the changing amountof the read voltage of the block that is the target of determination isless than the change amount threshold ΔVread-th, the determining section13 ends the process by determining that the life of the block that isthe target of determination is not nearing the end (step S23: No).

The notification processing section 15 of the drive control circuit 4receives the determination result from the determining section 13. Thenotification processing section 15 notifies the life of the NAND memory20 in accordance with the determination result by the determiningsection 13 by using the notification device 21 (step S23). That is, thenotification processing section 15 generates notification informationindicating contents to be notified in accordance with the determinationresult by the determining section 13, and supplies the same to thenotification device 21. In response to this, the notification device 21performs the notification regarding the life of the NAND memory 20 tothe user in compliance with the notification information.

For example, the notification processing section 15 generatesnotification information including a graph shown in FIG. 9 for eachblock in the NAND memory 20, and notifies that graph to the user as theinformation indicating whether the life is nearing its end or not. Thatis, the notification device 21 may for example be a display device, andthe notification processing section 15 notifies to the user that thelifetime of a block is nearing its end by displaying a bar graph showingthe distribution of the reading numbers of the plurality of memory cellsand displaying that a portion exceeding the frequency threshold Fth andthe number threshold Nth exists in a highlighted display.

Alternatively, for example, the notification processing section 15 maygenerate notification information including a graph shown in FIG. 14 foreach block in the NAND memory 20, supply the same to the notificationdevice 21, and notify that graph to the user as the informationindicating whether the life is nearing its end or not. That is, thenotification device 21 may for example be a display device, and thenotification processing section 15 may notify to the user that thelifetime of a block is nearing its end by displaying a bar graph showingthe distribution of the changing amounts of the read voltage of theplurality of memory cells and displaying that a portion exceeding thefrequency threshold Fth and the change amount threshold ΔVread-th existsin a highlighted display.

Alternatively, for example, the notification processing section 15 maygenerate the notification information including a message indicatingwhether the life is nearing to its end or not for each block in the NANDmemory 20, supply the same to the notification device 21, and notifythat message to the user as the information indicating whether the lifeis nearing its end or not. That is, the notification device 21 may forexample be a display device, and the notification processing section 15may notify to the user that the lifetime of the block is nearing its endby displaying the message indicating that the life is nearing to itsend.

According to the above, in the second embodiment, the monitoring section12B monitors the reading number (retry number) until the read processingsucceeds in repeatedly performing the read processing (performing theretry shift read processing) while gradually shifting the read voltageto one direction. Due to this, the change in the threshold distributionof the plurality of memory cells upon performing the read processing canbe monitored with a simple process.

Alternatively, the monitoring section 12B may monitor the read voltagewhen the read processing succeeds in repeatedly performing the readprocessing (performing the retry shift read processing) while graduallyshifting the read voltage to one direction. Due to this, the change inthe threshold distribution of the plurality of memory cells uponperforming the read processing can be monitored with a simple process.

Third Embodiment

Next, a non-volatile semiconductor storage device according to a thirdembodiment will be explained. Hereinbelow, parts different from thefirst embodiment will mainly be explained.

In the first embodiment, the reading number in repeatedly performing theread processing had been monitored, however, in the third embodiment, abit error number upon performing the read processing is monitored.Specifically, as shown in FIG. 15, a controller 10C of an SSD 100Cincludes a monitoring section 12C.

The monitoring section 12C monitors the change in the thresholddistribution of the plurality of memory cells (plurality of memory celltransistors MCT) in performing the read processing by monitoring the biterror number in the data of the plurality of memory cells in performingthe read processing.

That is, as shown in FIG. 12, the threshold distribution of theplurality of memory cells changes from a distribution in a fresh stateas shown in solid lines to a distribution after a long period of timehas elapsed since its first use shown in dotted lines. When thethreshold distribution shown in dotted lines and levels of read voltagesVA, VB, VC are compared, since memory cells with lower thresholdvoltages than the levels of the read voltages VA, VB, VC occur, theremay be cases in which data cannot be correctly read by using a defaultread voltage. Here, as the threshold distribution lowers to the lowervoltage side, the bit error number (a corrected bit number in the ECC)in the data of the plurality of memory cells in performing the readprocessing tends to increase. Due to this, by monitoring the bit errornumber, the change in the threshold distribution can be monitored.

Specifically, the monitoring section 12C includes a bit error numbermonitoring section 123C. The bit error number monitoring section 123Cmeasures the bit error number by obtaining information of the bit errornumber in performing the read processing from at least one of a firstECC circuit 118 and a second ECC circuit 112 in the physical blockunits. For example, in a case where the process called the wear levelingthat reduces the variety in the number of writing/erasure among blocksby evenly dispersing the data updating sections is being performed inthe SSD 100C, the bit error number monitoring section 123C measures thebit error number for each read processing from a representative physicalpage in a physical block that is a measuring target (that is, aplurality of memory cell transistors MCT driven by the selected wordline). The bit error number monitoring section 123C supplies a measuredresult to a determining section 13 as the monitoring result.

Further, as shown in FIG. 16, an operation of the SSD 100C differs fromthe first embodiment in the following points.

In step S4, if the error correction process error is not detected (stepS4: No), the monitoring section 12C of the drive control circuit 4stores the bit error number by updating a bit error number managingtable by a count value of the bit error number (step 31). Note that, thebit error number managing table is a table for managing the bit errornumber in the physical block units (physical block address units); andas the bit error number, the latest bit error number that had actuallybeen monitored is recorded. The bit error number managing table is forexample stored in a NAND memory 20.

When a notification regarding that for example a retry shift readprocessing is completed is received, the determining section 13 of thedrive control circuit 4 determines whether a life of a target block isnearing an end or not (step S32).

For example, the determining section 13 identifies a distribution of thebit error numbers of the plurality of memory cells for the block that isthe target of determination from the monitoring result by the monitoringsection 12 (see FIG. 17), and specifies a frequency of the bit errornumber that is at or more than a bit error number threshold BNth fromamong the distribution of the bit error numbers of the plurality ofmemory cells. The determining section 13 compares the specifiedfrequency with the frequency threshold Fth. If the specified frequencyis at or more than the frequency threshold Fth, the determining section13 proceeds the process to step S33 by determining that the life of theblock that is the target of determination is nearing the end (step S32:Yes). If the specified frequency is less than the frequency thresholdFth, the determining section 13 ends the process by determining that thelife of the block that is the target of determination is not nearing theend (step S32: No).

Alternatively, for example, the determining section 13 may compare themonitored bit error number of the block that is the target ofdetermination with a predetermined threshold in block units. That is,the determining section 13 may identify the bit error number of theblock that is the target of determination from the monitoring result bythe monitoring section 12C, and compare the bit error number of theblock that is the target of determination with the bit error numberthreshold BNth. If the bit error number of the block that is the targetof determination is at or more than the bit error number threshold BNth,the determining section 13 proceeds the process to step S33 bydetermining that the life of the block that is the target ofdetermination is nearing the end (step S32: Yes). If the bit errornumber of the block that is the target of determination is less than thebit error number threshold BNth, the determining section 13 ends theprocess by determining that the life of the block that is the target ofdetermination is not nearing the end (step S32: No).

The notification processing section 15 of the drive control circuit 4receives the determination result from the determining section 13. Thenotification processing section 15 notifies the life of the NAND memory20 in accordance with the determination result by the determiningsection 13 by using the notification device 21 (step S33). That is, thenotification processing section 15 generates notification informationindicating contents to be notified in accordance with the determinationresult by the determining section 13, and supplies the same to thenotification device 21. In response to this, the notification device 21performs notification regarding the life of the NAND memory 20 to theuser in compliance with the notification information.

For example, the notification processing section 15 generatesnotification information including a graph shown in FIG. 17 for eachblock in the NAND memory 20, and notifies that graph to the user as theinformation indicating whether the life is nearing its end or not. Thatis, the notification device 21 may for example be a display device, andthe notification processing section 15 may notify to the user that thelifetime of a block is nearing its end by displaying a bar graph showingthe distribution of the bit error numbers of the plurality of memorycells and displaying that a portion exceeding the frequency thresholdFth and the bit error number threshold BNth exists in a highlighteddisplay.

Alternatively, for example, the notification processing section 15 maygenerate notification information including a message indicating whetherthe life is nearing to its end or not for each block in the NAND memory20, supply the same to the notification device 21, and notify thatmessage to the user as the information indicating whether the life isnearing its end or not. That is, the notification device 21 may forexample be a display device, and the notification processing section 15may notify to the user that the lifetime of the block is nearing its endby displaying the message indicating that the life is nearing to itsend.

According to the above, in the third embodiment, the monitoring section12C monitors the bit error number in the data of the plurality of memorycells in performing the read processing. Due to this, the change in thethreshold distribution of the plurality of memory cells upon performingthe read processing can be monitored with a simple process.

Fourth Embodiment

Next, a non-volatile semiconductor storage device according to a fourthembodiment will be explained. Hereinbelow, parts different from thesecond embodiment will mainly be explained.

In the second embodiment, the read processing had been repeated whileshifting the read voltage gradually toward one direction until the readprocessing succeeds, however, in cases where the read processingsucceeds without having to shift the read voltage, there is no knowingas to how much allowability is left before an error correction processerror arises.

Thus, in the fourth embodiment, by repeatedly performing the readprocessing while gradually shifting the read voltage respectively towarda rising direction and a lowering direction until the read processingfails, the allowability that is left before the error correction processerror arises is grasped. Specifically, as shown in FIG. 18, a controller10D of an SSD 100D includes a monitoring section 12D and a changingsection 14D.

The changing section 14D references change information 141D, and changesthe read voltage so as to gradually shift respectively to the risingdirection and the lowering direction. Specifically, the changeinformation 141D includes a voltage changing amount to be shifted eachtime in the rising direction, and a voltage changing amount to beshifted each time in the lowering direction. By referencing the changeinformation 141D, the changing section 14D shifts the read voltage bythe predetermined voltage changing amount respectively in the risingdirection and the lowering direction each time the read processing isperformed. The changing section 14D supplies the read voltage after thechange, or a command corresponding to the read voltage after the changeto a NAND memory 20.

A reading number monitoring section 121D of the monitoring section 12Dmonitors the change in the threshold distribution as to how muchallowability is left in the current threshold distribution before theerror correction process error arises by monitoring the reading numberuntil the read processing fails in repeatedly performing the readprocessing while gradually shifting the read voltage. Or on the otherhand, a read voltage monitoring section 122D of the monitoring section12D monitors the change in the threshold distribution as to how muchallowability is left in the current threshold distribution before theerror correction process error arises by monitoring the read voltagewhen the read processing fails in repeatedly performing the readprocessing while gradually shifting the read voltage.

That is, as shown in FIG. 20, the threshold distribution of theplurality of memory cells changes from its distribution in a fresh stateshown in solid lines to a distribution after a long period of time haselapsed since its first use shown in dotted lines. In comparing thethreshold distribution shown in the dotted lines and levels of readvoltages VA, VB, VC, it can be understood that lower voltage sideportions of the threshold distribution approach closer to the levels ofthe read voltages VA, VB, VC than in the fresh state, but enough spaceis still present between them. Here, a condition of the allowability ofthe read voltage in the rising direction (+ direction) accompanying thechange in the threshold distribution can be monitored by monitoring thereading number until the reading fails or the read voltage when thereading fails in repeatedly performing the read processing whilegradually shifting the read voltage to the rising direction (+direction).

As shown in FIG. 20, the condition of the allowability of the readvoltage in the rising direction (+ direction) accompanying the change inthe threshold distribution may differ depending on the data. Forexample, for data “10”, the read voltage may gradually shift from VA toVA21 trough VA24, and the reading may fail at the read voltage VA24. Thereading number for the data “10” until the reading fails is for example4. For example, for data “00”, the read voltage may gradually shift fromVB to VB21 through VB23, and the reading may fail at the read voltageVB23. The reading number for the data “00” until the reading fails isfor example 3. For example, for data “01”, the read voltage maygradually shift from VC to VC21 and then VC22, and the reading may failat the read voltage VC22. The reading number for the data “01” until thereading fails is for example 2. That is, in FIG. 20, an example is givenfor a case in which the following formula 4 stands valid.Reading Number of Data “10”>Reading Number of Data “00”>Reading Numberof Data “01”  Formula 4

Alternatively, a changing amount of the read voltage with which thereading of the data “10” had failed from a default value is ΔVA3. Achanging amount of the read voltage with which the reading of the data“00” had failed from the default value is ΔVB3 (<ΔVA3). A changingamount of the read voltage with which the reading of the data “01” hadfailed from the default value is ΔVC3 (<ΔVB3). That is, in FIG. 20, anexample is given for a case in which the following formula 5 standsvalid.Changing Amount ΔVA3 of Read Voltage of Data “10”>Changing Amount ΔVB3of Read Voltage of Data “00”>Changing Amount ΔVC3 of Read Voltage ofData “01”   Formula 5

Further, a phenomenon related to the condition of the allowability ofthe read voltage in the rising direction is not limited to the case ofthe memory cells (MLCs: Multi Level Cells) storing data of 2 bits ormore (multilevel) as shown in FIG. 20; it applies similarly to memorycells (SLCs: Single Level Cells) storing data of 1 bit (two-level) asshown in FIG. 21.

Further, a size of the memory cells in the NAND type flash memory isrefined, and a number of electrons stored in a memory cell is reduced.Due to this, an influence of interference noises between adjacent cellsis relatively increased, and a possibility is known that when datawriting (programming) and reading are performed to one memory cell, datain another memory cell adjacent thereto may change. For example, thedata writing is performed to the memory cell that is selected by theword line and the bit line. However, by a strong stress on unwrittencells by the selected cell, the unselected cells also assume a state oflightly being written, and a phenomenon of a program disturb (PD) inwhich the threshold voltage changes to higher states may occur. Further,in the data reading also, voltage is applied to the unselected cells.Due to this, the unselected memory cells also assume the state oflightly being written, and a phenomenon of a read disturb (RD) in whichchange takes place to raise the threshold voltage occurs. That is, itcan be understood that higher voltage side portions of the thresholddistribution may approach closer to the levels of the read voltages VA,VB, VC, but enough space is still present between them. Here, acondition of allowability of the read voltage in the lowering direction(− direction) accompanying the change in the threshold distribution canbe monitored by monitoring the reading number in repeatedly performingthe read processing while gradually shifting the read voltage to thelowering direction (− direction).

As shown in FIG. 20, the condition of the allowability of the readvoltage in the lowering direction (− direction) accompanying the changein the threshold distribution may differ depending on the data. Forexample, for data “11”, the read voltage may gradually shift from VA toVA11 and then VA12, and the reading may fail at the read voltage VA12.The reading number for the data “11” until the reading fails is forexample 2. For example, for data “10”, the read voltage may graduallyshift from VB to VB11 through VB14, and the reading may fail at the readvoltage VB14. The reading number for the data “10” until the readingfails is for example 4. For example, for data “00”, the read voltage maygradually shift from VC to VC11 through VC15, and the reading may failat the read voltage VC15. The reading number for the data “00” until thereading fails is for example 5. That is, in FIG. 20, an example is givenfor a case in which the following formula 6 stands valid.Reading Number of Data “11”<Reading Number of Data “10”<Reading Numberof Data “00”  Formula 6

Alternatively, a changing amount of the read voltage with which thereading of the data “11” had failed from a default value is ΔVA2. Achanging amount of the read voltage with which the reading of the data“10” had failed from the default value is ΔVB2 (>ΔVA2). A changingamount of the read voltage with which the reading of the data “00” hadfailed from the default value is ΔVC2 (>ΔVB2). That is, in FIG. 20, anexample is given for a case in which the following formula 7 standsvalid.Changing Amount ΔVA2 of Read Voltage of Data “10”>Changing Amount ΔVB2of Read Voltage of Data “00”>Changing Amount ΔVC2 of Read Voltage ofData “01”   Formula 7

Further, the phenomenon related to the condition of the allowability ofthe read voltage in the lowering direction is not limited to the case ofthe memory cells (MLCs: Multi Level Cells) storing data of 2 bits ormore (multilevel) as shown in FIG. 20; it applies similarly to thememory cells (SLCs: Single Level Cells) storing data of 1 bit(two-level) as shown in FIG. 21.

Further, as shown in FIG. 19, an operation of the SSD 100D differs fromthe second embodiment in the following points.

In step S4, if the error correction process error is not detected (stepS4: No), the process proceeds to step S32 by determining that thereading succeeded (step S31). The changing section 14D of the drivecontrol circuit 4 performs an adjustment to lower or raise the value ofthe read voltage from the value used in step S2 by the predeterminedstep width (step S32). The value of the read voltage after theadjustment is sent to the memory chip (NAND memory 20) together with ashift read command, and the memory chip transitions to the process ofstep S2 and performs the read processing by using the read voltage thathas been newly sent.

In step S4, if the error correction process error is detected (step S4:Yes), the monitoring section 12D of the drive control circuit 4 storesthe reading number in the rising direction by updating a reading numbermanaging table in the rising direction by the count value of the readingnumber in the rising direction (step S33). Alternatively, the monitoringsection 12D of the drive control circuit 4 may store the reading numberin the lowering direction by updating a reading number managing table inthe lowering direction by the count value of the reading number in thelowering direction (step S33).

Alternatively, the monitoring section 12D of the drive control circuit 4may update the read voltage changing amount managing table in the risingdirection by the changing amount of the read voltage when the readprocessing in the rising direction failed (step S33). Alternatively, themonitoring section 12D of the drive control circuit 4 may update theread voltage changing amount managing table in the lowering direction bythe changing amount of the read voltage when the read processing in thelowering direction failed (step S33).

Then, the process proceeds to step S35 by determining that the readinghad failed (step S34). Next, the drive control circuit 4 determineswhether the read voltage has shifted in both of the rising direction andthe lowering direction or not (step S35).

If the read voltage has not been shifted in both directions (step S35:No), the changing section 14D of the drive control circuit 4 changes thedirection along which the read voltage is shifted, and returns theprocess to step S2.

If the read voltage has been shifted to both directions (step S35: Yes),the determining section 13 of the drive control circuit 4 calculates aremainder of life of each block in the NAND memory 20 (step S36), andsupplies information regarding the remainder of life of each block inthe NAND memory 20 to the notification processing section 15.

Then, the notification processing section 15 of the drive controlcircuit 4 receives the information regarding the remainder of life ofeach block in the NAND memory 20 from the determining section 13. Inaccordance with that information, the notification processing section 15notifies the remainder of life of the NAND memory 20 by using thenotification device 21 (step S37). That is, the notification processingsection 15 generates notification information indicating the contents tobe notified in accordance with the information regarding the remainderof life of each block in the NAND memory 20, and supplies the same tothe notification device 21. In response to this, the notification device21 performs a notification to the user of the remainder of life of theNAND memory 20 in compliance with the notification information.

Note that, at least two of the first embodiment to the fourth embodimentmay be combined. For example, as shown in FIG. 22, a controller 10E ofan SSD 100E may include a monitoring section 12E. The monitoring section12E includes a mode switching section 124E for switching a first mode, asecond mode, a third mode, and a fourth mode.

The monitoring section 12E for example performs the operation in thefirst embodiment in the first mode, the operation in the secondembodiment in the second mode, the operation in the third embodiment inthe third mode, and the operation in the fourth embodiment in the fourthmode.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A memory system connectable to a host apparatusincluding a display device, the memory system comprising: a nonvolatilememory; and a controller circuit configured to: receive a read requestfrom the host apparatus; on receiving the read request, perform a firstread operation to read first data from the nonvolatile memory; and iffirst error bits in the first data read by the first read operation areuncorrectable, send information about a life of the nonvolatile memorybased on a number of the first error bits of uncorrectable to displaythe life of the nonvolatile memory on the display device.
 2. The memorysystem according to claim 1, wherein the information indicates that anumber of the first error bits is greater than a threshold.
 3. Thememory system according to claim 1, wherein the controller circuit isfurther configured, in response to the read request, to determinewhether or not the first error bits in the first data read by the firstread operation are uncorrectable.
 4. The memory system according toclaim 1, wherein the controller circuit is configured to, if the firsterror bits in the first data read by the first read operation areuncorrectable, send information including a message indicating whetherthe life is nearing its end or not to display the message on the displaydevice.
 5. The memory system according to claim 3, wherein thecontroller circuit is further configured to determine whether or not thenumber of the first error bits is greater than a threshold; and whereinthe controller circuit is configured to, if the first error bits isgreater than the threshold, send information about the life of thenonvolatile memory to display the life of the nonvolatile memory on thedisplay device.
 6. The memory system according to claim 1, wherein thenonvolatile semiconductor memory includes a plurality of memory cells,and each of the plurality of memory cells is configured to store two ormore than two bits of data.
 7. The memory system according to claim 1,wherein the nonvolatile semiconductor memory is a NAND type flashmemory.
 8. A method of controlling a memory system connectable to a hostapparatus including a display device, the memory system including anonvolatile memory, the method comprising: receiving a read request fromthe host apparatus; on receiving the read request, performing a firstread operation to read first data from the nonvolatile memory; and iffirst error bits in the first data read by the first read operation areuncorrectable, sending information about a life of the nonvolatilememory based on a number of the first error bits of uncorrectable todisplay the life of the nonvolatile memory on the display device.
 9. Themethod according to claim 8, wherein the information indicates that anumber of the first error bits is greater than a threshold.
 10. Themethod according to claim 8, further comprising in response to the readrequest, determining whether or not the first error bits in the firstdata read by the first read operation are uncorrectable.
 11. The methodaccording to claim 8, wherein the sending includes, if the first errorbits in the first data read by the first read operation areuncorrectable, sending information including a message indicatingwhether the life is nearing its end or not to display the message on thedisplay device.
 12. The method according to claim 10, further comprisingdetermining whether or not the number of the first error bits is greaterthan a threshold, and wherein the sending includes, if the first errorbits is greater than the threshold, sending information about the lifeof the nonvolatile memory to display the life of the nonvolatile memoryon the display device.
 13. The method according to claim 8, wherein thenonvolatile semiconductor memory includes a plurality of memory cells,and each of the plurality of memory cells is configured to store two ormore than two bits of data.
 14. The method according to claim 8, whereinthe nonvolatile semiconductor memory is a NAND type flash memory.